2016.9
About Instruments Today No. 208
Demonstration of Smart Machine Research Platform in Taiwan — Exhibition & Forum of Industry 4.0 in NARLabs [ 下載 PDF ]
Introduction to Smart Factory [ 下載 PDF ]
Shuo-Yan Chou, Anindhita Dewabharata
The concepts of Smart Factory vary during different times. With the current technology and industry development and needs for coping with future social economic development, a pragmatic definition is formed. Smart Factory is the smart production environment mainly based on the core technology of Industry 4.0, namely, Cyber Physical System. It is a paradigm shift for the operational activities in factories, not only applicable for many other industries but also creating significant impact far beyond the boundary of manufacturing industries through the connected smart products they will be producing.
An Introduction to The Small Cyber-Physical System in ITRC [ 下載 PDF ]
Wen-Hui Gu, Shyh-Jye Jou, Chien-Yao Huang, Vipin Ting
The issues related to Industry 4.0 and smart factories have become a global hot topic in the past five years. This article outlines the Executive Yuan's 'Productivity 4.0' policy objectives about CPS (Cyber-Physical System) and development in ITRC (Instrument Technology Research Center), NARL (National Applied Research Laboratories). The systems were established including the environment monitoring system, personnel/object positioning tracking system, intelligence processing systems, and information integration. The traditional precision optics manufacturing laboratory was transformed into a small-scale CPS as a test and verification platform which will provide services for the field of the smart factories technologies development.
A Machine Vision System Development for Inspecting Defects on Multi-Surfaces of Chips [ 下載 PDF ]
Ming-Fu Chen, Chih-Wen Chen, Chih-Chung Chou, Chih-Yen Chen
For the thinner chips (< 100 µm) with circuit design both on their front and back sides, the techniques of cutting then become the critical factor of cutting quality for these thin chips due to limitation of manufacturing processes and application requirements. But only few semiconductor companies with advantaged technologies own these cutting technologies. Defects of chipping and glue could exist on chip surfaces of front, back and edge sides after cutting induced by cutting tools and methods, and film material of wafer. These defects might impact quality and yield rate of chip production. Therefore, multiple surfaces of chips have to be inspected to ensure their quality of production lines, and then feedback the chip quality information for improving the manufacturing processes as well. To satisfy the inspection requirements of screening out the unqualified chips during the sorting process, an AOI system is designed and implemented by multiple optical imaging devices with high spatial resolution for image acquisition and defects detection for multiple surfaces of each chip. And chips are re-allocated on target wafer (GO) or put in tray (NG) in real-time for classification. Here we proposed an acquisition architecture with multiple pick and place heads for sucking these inspected chips moved synchronously to acquire the images on front, back and 4 edge surfaces for different chips at their corresponding stations, and then inspect their defects. The computing loading of defect inspection for front and back sides of chips is larger than 4 edge sides. So the imaging sequence for these 2 sides of chips is allocated at the first and second stations respectively, and then 4 edge sides of chips. Thus system can accomplish the inspection for all surfaces of each chip and real-time determine the quality of chips before put onto target wafer. Developed inspection system has features and advantages of real-time inspection with high throughput during chip sorting process, and easily adjustment and calibration for all optical imaging devices to inspect different types of chips. Developed AOI system has characteristics of large FOV and high spatial resolution for applications. The size of inspected chips can be 7.2 × 6.8 mm maximally. The overkilled rate of inspection can be smaller than 5%, and the accuracy of inspected defect size can be within 1.0 pixel. The sorter integrated with developed AOI system has been sold to semiconductor manufacturers, and applied for real-time inspection and quality assurance and tracing of chips. Moreover, the time and cost for manual inspection can be reduced substantially, and the efficiency of packaging can be improved as well.
Refractive Index Profiling of A GRIN Rod Based on A Microspectrophotometer [ 下載 PDF ]
Chun-Jen Weng
A white light scanning method of surface reflectivities based on a microspectrophotometer is proposed to onedimensionally measure the refractive index profiling on a polished GRIN rod. The measuring range is broadband in the range of 400 nm to 1000 nm. A fused-silica cladding of GRIN rod is used to be a reference standard for measuring the absolute reflectivity of the core of GRIN rod.
Hollow Cone Dark Field Imaging for Biological Material [ 下載 PDF ]
Chun-Ying Tsai, Yuan-Chih Chang, Fu-Rong Chen
Recently the high resolution biological imaging in electron microscopy still be limited due to the radiation damage and low contrast. Phase plates have been developed to enhance the contrast at small defocus but electrical charging remains a problem. Although the phase contrast at low spatial frequencies can be enhanced by using a large defocus but this strongly reduces the resolution. Hence we propose a new route to enhance the contrast at small defocus by hollow cone dark field imaging technique using thermal diffuse scattered electrons in electron microscopy. We demonstrate the hollow cone dark field imaging technique in three biological sample preparation methods (negative staining method, Cryo-electron microscopy method and in situ liquid electron microscopy method) gives about 5 times contrast increase as compared to bright field imaging.
Using IR Illuminator for Driver.s Eye Detection System [ 下載 PDF ]
Yung-Hsiang Chen
This paper presented a using IR illuminator for driver's eye detection system. The device uses IR illumination and camera acquires the eyes of driver to detect opening or closing driver drowsiness detection. The IR illumination creates the bright pupil effect which creates a nearly perfect circle. The system searches, tracks and blinks for the eyes location in each frame. Finally, detect the size of pupil and opening or closing driver eye and classify driver drowsiness using SVM classification.
Design and Analysis of A TMA Telescope for Next Generation Earth Observation Satellite [ 下載 PDF ]
Yu-Chuan Lin, Shenq-Tsong Chang, Roger Lien, Ting-Ming Huang
Three mirror anastigmatic (TMA) telescope provides a better solution to meet the requirements of high resolution and wide swath, it has become one of candidate to be next generation observation payload for satellite. This article reports on design, analysis, assembly and implementation of a TMA telescope for next earth observation satellite. A straightforward approach is presented that integrated finite element method and Zernike polynomials fitting techniques is found to successfully predict optical performance. Furthermore, an optomechanical structure of TMA optical system was configured which is implemented to verify the present.
Growth and Characterization of Semi-Polar InN Materials [ 下載 PDF ]
Wei-Chun Chen, Shou-Yi Kuo, Fang-I Lai, Chien-Nan Hsiao
InN material is a direct energy gap semiconductor which is potential for optoelectronics and electronics application. Semipolar InN(1013) films were prepared on LaAlO3(112) substrate by varying the substrate temperature. The results show that semipolar InN(1013) layers can be grown at 510 °C with the (0002) FWHMs value of 1830 arcsec and (1013) XRC FWHMs value of 1408 arcsec. Also, the InN film is in epitaxy with LAO substrate with orientation relationships of InN(1013) // LAO(112) and [1210]InN // [111]LAO. The lattice mismatch between InN and LAO can then be estimated to be 7.75 % along the [1210]InN direction and 0.2 % along the [3032]InN direction. Electronic properties showed that the InN film grown at 510 °C exhibits the highest electron mobility of 494 cm2/V-s and lowest carrier concentration of 2.4 × 1019 cm−3. PL spectra at 10 K showed the peaks of near band-edge emission at energies between 0.72–0.81 eV. However, InN grown at 510 °C has the highest peak intensity and the narrowest FWHM of these samples which has better quality.
