2016.12
About Instruments Today No. 209
Forensic Investigation
Applications of Nano-inspection Technologies [ 下載 PDF ]
James Su, Nian-Nan Chu, Ming-Hua Shiao, Chien-Nan Hsiao, Fong-Zhi Chen
The vigorous development of 'Nanotechnology' is attributed to the enhancement of advanced fabrication technology, atomic level manipulation and nanoscale inspection technology. Nanotechnology is the meso-scale property research in the atomic or molecular level, and strongly depends on measurement systems for analysis. In this article, the importance of nanoscale inspection technology at present is introduced through nano metrology standard, nanoscale inspection technology and the annual event.
Scanning Microwave Impedance Microscope: Nanoscale Mapping of Permittivity and Conductivity [ 下載 PDF ]
Zhuangqun Huang, Benedict Drevniok, Peter de Wolf, St. John Dixon-Warren, Oskar Amster, Stuart Friedman, Bede Pittenger, Chunzeng Li, Yongliang Yang, Yen-Fu Chen
Scanning microwave impedance microscopy (sMIM) is an AFM-based technique for materials and device characterization. The reflected microwave signal from the tip-sample interface holds information of the electrodynamic properties of the sample surface underneath the tip apex. Detecting and processing in real time of the reflectance allows sMIM to directly access the permittivity and conductivity of the material. When an AFM-type sMIM probe is scanning across the sample surface, sMIM is capable of imaging variations in resistive (sMIM-R) and capacitive (sMIM-C) properties. This detection approach does not require adding electrical contact to the sample as sMIM is based on the capacitive coupling between the tip and the sample. By AC-biasing the sample or device under test (DUT), sMIM also provides carrier profiling (dC/dV) capability similar to traditional scanning capacitance microscopy (SCM). In the same way, it also uniquely offers mapping of nonlinear resistive properties (dR/dV). With both regular and AC-sample-bias modulated sMIM signals, sMIM is suitable for studying surfaces with complex composition or DUTs with a broad dynamic range, e.g., metallic, semiconducting and insulating domains. As a near field method, the resolution of sMIM is only limited by the tip radius of the probe and it can easily achieve a lateral resolution of < 20 nm for electrical mapping. Sub-aF sensitivity and high S/N ratios are realized by using waveguide tips with coaxial shielding. Having these unique capabilities, sMIM is superior to other AFM-based electrical modes for a broad range of applications. This article provides an introduction of sMIM and its integration with versatile AFM platforms. When combined with PeakForce Tapping, it is possible to obtain sMIM results on delicate samples such as carbon nanotubes.
Three-Dimensional Atom Probe [ 下載 PDF ]
Hung-Wei Yen
Three-Dimensional Atom Probe (3DAP) is the only materials characterization technology offering capabilities for both three-dimensional image and chemical composition measurement at the atomic scale. It has been applied to many scientific and technological fields, including metallurgy, electronics, semiconductor, optoelectronics, energy, geology, and biomedical researches. The current article provides an introduction to history and principle of atom probe. It is expected to give readers basic understanding in 3D atom probe.
The Applications of Hard X-ray Synchrotron Radiation in Nano-Material Researches [ 下載 PDF ]
Hwo-Shuenn Sheu, Yu-Chun Chuang, Chung-Kai Chang, Yen-Chung Lai, Chung-Jie Chang
The development of synchrotron radiation in Taiwan has been proceed for 22 years since the first beam of Taiwan Light Source (TLS) opened to user in 1994. The new facility, Taiwan Photon Source (TPS), opened to user start from September 2016. TPS is a 3 GeV synchrotron facility with the best brightness light of the medium energy synchrotron light over the world. The most promising characters of TPS are its narrow beam emittance, only 1.6 nm.rad, and its coherence. The beam size can be easily focus down to few tens nanometer and quite suitable for nano probe of image. In this article, we will describe the development of synchrotron radiation in Taiwan and the applications of high resolution powder X-ray diffraction to nano-material researches. Some other X-ray analysis methods are also discussed.
The Investigation of 2D Channel Material Device in Semiconductor Process and Equipment Development by CMOS Manufacturing Technology [ 下載 PDF ]
Min-Cheng Chen
This paper will describe the novel MoS2 material of transition-metal dichalcogenides, TMD in process and device development at recent five years. In the first, we will introduce its unique 2D layered material properties by CMOS compatible manufacturing technology in semiconductor solid growth method and special monolayer surface treatment process. Then we will discuss its atomic channel scale, low voltage operation and 3D stackable structure in nano electrionic device application. This advanced 2D electronic channel material integration technique in nano semiconductor manufacturing will provide a possible solution for future next non-Si CMOS technology.
Fabrication of Cone-Shaped CNF/SiC-Coated Si-Nanocone Structures by Microwave Plasma Chemical Vapour Deposition [ 下載 PDF ]
I-Ju Teng, Sheng-Rui Jian
Novel cone-shaped carbon nanofi ber (CNF)/silicon carbide (SiC)-coated Si-nanocone (Si-NC) composite structures with excellent field emission (FE) performance have been fabricated by microwave plasma chemical vapour deposition (MPCVD). Transmission electron microscopy analyses reveal that the newly developed cone-shaped composite structures are composed of bamboolike herringbone CNFs grown vertically on the tips of conical SiC layers with a fl at-top Si cone embedded underneath. For this CNF/SiC-coated Si-NC composite array, a ultra-low threshold fi eld of 0.32 V µm−1 (at 10 mA cm−2), a large emission current density of 668 mA cm−2 at 1.05 V µm−1, and a field enhancement factor as high as ~48349 are obtained. In addition, the FE lifetime test performed at a large emission current density of 200 mA cm−2 under an applied field of 1 V µm−1 shows no discernible decay during a period of over 260 minutes. We deduce that this superior FE performance can be attributed to the specific bamboo-like herringbone CNFs with numerous open graphitic edges and a faceted top end, and the conical base SiC/Si structures with sufficient adhesion to the substrate surface. Such a novel structure with promising emission characteristics makes it a potential material for electron field emitters.
Investigation of Fabricated Through Glass Via (TGV) Process by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) for 3D-IC Package Applications [ 下載 PDF ]
Yu-Hsiang Tang, Ming-Hua Shiao, Chih-Sheng Yu
This paper presents the manufacturing process of through glass via (TGV) structure and direct implications on the design of quartz-based interposer applications for three-dimensional integrated circuit (3D-IC) packaging technology. First, we analyze detailed substrate thickness formed by dry etching with various associated structures based on the use of thin quartz as a substrate material. Then, we evaluated the holes etched in glass wafers by photolithography and inductively coupled plasma-reactive ion etching (ICP-RIE) techniques. The fabricated TGV morphology showed an excellent characterization between substrate thickness, via diameter, and via shape for a vertical interposer. Finally, we obtain that TGV structure with a diameter of 50 µm in 150 µm thin quartz wafer exhibit high usability for thin wafer processing with the optimized fabrication parameters.
Gold Dendritic Nano-Forests for Visible-Light- Enhanced Methanol Oxidation Reaction [ 下載 PDF ]
Chun-Ting Lin, Ming-Hua Shiao, Mao-Nan Chang, Fan-Gang Tseng
Photo-enhanced methanol oxidation reaction (PEMOR) is a crucial issue in the development of photo-fuel cells. In the study of catalysts for the PEMOR, efforts have been focused on metal-semiconductor composites in the prior arts. In this study, we utilized metal dendritic nanoforests (DNFs) as the photo-elecrodes to boost methanol oxidation reaction under irradiation. These pure metallic nanostructures can serve as catalysts and photo-catalysts simultaneously. Besides, a facile fluoride assisted galvanic replacement reaction was developed to prepare threedimensional Au DNFs under ambient conditions. The material characteristics and photo-enhancement toward methanol oxidation reaction were studied. The oxidation current of methanol was boosted by 28% under broadband visible light illumination (69 mW-cm−2；λ < 400 nm) .We further compared the photo-enhancements under various irradiation wavelengths. Localized surface plasmon resonance was introduced to explain the wavelengthdependent enhancement. Moreover, the cost-effective and facile process suitable for room-temperature preparation of Si-based metallic DNFs provides a new direction for preparing large-scale free-standing metallic nanostructures.
Lighting the Way to a Better Tomorrow [ 下載 PDF ]
