Vacuum Technology

Introduction to Vacuum Technology [ 下載 PDF ]

Cheng-Chung Lee

Construction of the Vacuum Systems and the Technologies for the Taiwan Photon Source (TPS) [ 下載 PDF ]

Gao-Yu Hsiung

Taiwan Photon Source (TPS) is an accelerator-synchrotron light source of 3 GeV in energy which delivers high brilliant Soft X-ray and Hard X-ray for experimental researches. The electron storage ring, major part of the TPS, is an ultrahigh vacuum (UHV) system of 518.4 m in circumference divided into 24 super-periods each contains a long-straight section, 7 m or 12 m in length, and a 14 m arc-cell section. Aluminum alloys were adopted for the electron beam ducts. All the 24 sets of 14 m arc-cell vacuum systems were entirely produced in-house in the clean room including the works in series of assembling, welding, installation of vacuum components, vacuum baking to the UHV, and sealed. Each arc-cell was transported to the TPS-tunnel and installed on the girder supports, and then the long straight sections be installed and baked to the UHV. Methodologies of the construction for the TPS vacuum systems, the components, and the installation techniques will be described in this article.

The Development of Vacuum Instrument Science and Technology [ 下載 PDF ]

Chien-Nan Hsiao

The development of vacuum instrument such as device, equipment, thin film process, and vacuum calibration followed by the introduction to future direction in vacuum science and technology was described.

The Progress Optical Vacuum Coatings [ 下載 PDF ]

Cheng-Chung Lee

Vacuum means gas molecules are removed from a sealed space and leaving residual gases behind. There are many scientific and industrial applications based on vacuum technology. In this article we focused on the vacuum coatings for optical applications, named as optical interference coatings. Optical interference coatings play as an important role in the progress of optics and photonics. A brief review of the evolution of optical interference coatings from the theory, the design to the manufacture and applications was described. Some novel techniques including metamaterial and quantum dots doping have also been discussed.

The in-situ Measuring Technologies Applied on Atomic Layer Deposition [ 下載 PDF ]

Chien-Wei Chen, Wen-Hao Cho, Chi-Chung Kei

Atomic layer deposition (ALD) is one of the most important technologies in semiconductor IC foundry processes for deposition of nanoscale ultra-thin films. With the development of ALD technology, the in-situ measurements of ALD material and process become more and more important. In this article, we discuss the characterization of ALD in-situ measurement, in addition, we also share the in-situ technologies applied on ALD experiments which are developed by ITRC ALD research team.

Vacuum Process in Transparent Conductive Oxide Development—Composite Dielectric & Metal Stacking Layers for Transparent Conductive Electrode Application [ 下載 PDF ]

Pang-Shiu Chen, Chao-An Jong

Transparent conductive electrodes (TCE) get a lot of attentions in many optoelectronic devices, such as touch screen of display, smart windows, light emitting diode, and solar cells. The TCE could be achieved by many approaches and the best quality of TCE like ITO is obtained by vacuum technology. In order to reduce the production cost and improve its properties to fulfill different application requirement, lots of new technologies were proposed, such as the doped metal oxide, carbon nanotube/graphene, metal grid, Ag nanowire and composite dielectric/metal stacking layers structure and so on. In this work, the authors will focus on the status, structure design, advantages, and challenges of the composite stacking layers technology. Through the physical vapor deposition process, the transparent and low-resistance dielectric/metal/dielectric (DMD) stacking layers on flexible substrate can be processed at a lower temperature. The DMD stacking technology is promising for large area and wearable electronic devices application.

Design and Performance of Continuous Production Type VHF Plasma Enhanced Coating Equipment [ 下載 PDF ]

Chun-Kai Huang, Chang-Sin Ye, Min-Hang Weng, , Shang-Chou Chang, Chun-Sen Wu

Plasma enhanced chemical vapor deposition (PECVD) for the optoelectronic semiconductor industry, the most critical of the process equipment, the production of the best mode of equipment has been the industry continued attention and investment projects. Among them, the continuous production (In-line type) is a cost-effective production program, in particular, can correspond to the demand for high-capacity solar photovoltaic industry, especially heterogeneous coating production process, such as high effi ciency silicon dioxide hetero surface solar cells structure. In this paper, the design process and key technical contents of continuous production PECVD equipment are introduced. The selection of equipment structure and even the key modules include the heating system, radio frequency system and fluid structure construction. Equipment development process to radio frequency electromagnetic field, hot fluid analysis and other technologies as the main body, with the use of measuring instruments to assist the use of deconstruction of PECVD equipment in the RF energy behavior, the impact of equipment performance, such as plasma distribution uniformity of various design considerations. For the needs of high stability, high production capacity of the production PECVD equipment industry, to provide its own equipment, independent production program.

Investigation of High Quality Cu₂ZnSnSe₄ (CZTSe) Solar Cells [ 下載 PDF ]

Fang-I Lai, Jui-Fu Yang, Yu-Ling Wei, Shou-Yi Kuo

Polycrystalline Cu₂ZnSnSe₄ (CZTSe) thin films were fabricated by evaporation and following selenization. Singlephase CZTSe films were formed in the temperature range of 480–540 °C, with a selenization step of 30 min. X-ray diffraction and Raman spectroscopy revealed that these thin films exhibited high crystallinity and strong preferential orientation along the (112) direction, confirming the presence of the kesterite CZTSe phase. The films prepared at temperatures above 520 °C showed many voids at the bottom of the CZTSe absorber layer. This phenomenon is attributed to Sn loss during high-temperature growth and is confirmed by scanning electron microscopy and energy dispersive X-ray spectroscopy analyses. The band gaps (Eg) of the CZTSe thin films varied from 0.88 to 0.93 eV, depending on the SnSex loss during selenization. The solar cell fabricated with the CZTSe film grown at 500 °C showed the best conversion efficiency of 7.18%, with open-circuit voltage of 0.38 V, short-circuit current density of 42.34 mA/cm², and fill factor of 44%.

Effect of Rapid Thermal Annealing Process on the Properties of Ga-doped ZnO Films Grown by MOCVD [ 下載 PDF ]

Chiung-Yi Huang, Sin-Liang Ou, Ray Hua Horng

In this research, Ga-doped ZnO (GZO) thin films were prepared on sapphire substrates at the growth temperature of 350 °C by using metalorganic chemical vapor deposition (MOCVD). The Ga concentration of GZO film can be modified by increasing the TEGa flow rate from 0 to 20 sccm. The structural, optoelectronic and photoluminescence characteristics of GZO films were analyzed in detail. To enhance these properties of GZO, these as-deposited films were further treated by performing the rapid thermal annealing (RTA) process at 550 °C for 2 minutes with the N2 atmosphere. It can be found that the crystal quality of GZO films was improved through the RTA process. Moreover, based on the transmittance spectra, we can observe that the as-deposited and annealed GZO films both had high transparency above 90% (wavelength range: 400–800 nm). The photoluminescence results revealed that GZO films possessed a mixed bandgaps as the TEGa flow rate was higher than 10 sccm in the fi lm's growth. In addition, the enhancement of crystallinity and a blueshift in bandgap peaks also appeared in these GZO films. On the other hand, the intensity of the bandgap to broad band luminescence peaks was enhanced. Besides, the electrical resistivity of GZO can be decreased effi ciently via the RTA process, indicating that the RTA treatment is highly beneficial for improving the characteristics of GZO films.